STP100NF04(2007) データシートの表示（PDF） - STMicroelectronics

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STP100NF04
(Rev.:2007)

N-channel 40V - 0.0043Ω - 120A - TO-220 - D2PAK STripFET™ II Power MOSFET

STMicroelectronics 

STB100NF04 - STP100NF04

Figure 17. Allowable Iav vs. Time in Avalanche

Electrical characteristics

The previous curve give the safe operating area for unclamped inductive loads, single pulse

or repetitive, under the following conditions:

PD(AVE) = 0.5*(1.3*BVDSS*IAV)

EAS(AR) = PD(AVE) * tAV

Where:

IAV is the Allowable Current in Avalanche

PD(AVE) is the Average Power Dissipation in Avalanche (Single Pulse)

tAV is the Time in Avalanche

To de rate above 25°C, at fixed IAV, the following equation must be applied:

IAV=2*(Tjmax - TCASE) / (1.3*BVDSS * Zth)

Where:

Zth= K*Rth is the value coming from Normalized Thermal Response at fixed pulse width

equal to TAV

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