STD60NF55L データシートの表示（PDF） - STMicroelectronics

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STD60NF55L

N-channel 55V - 0.012Ω - 60A - DPAK/IPAK STripFET™ II Power MOSFET

STMicroelectronics 

STD60NF55L - STD60NF55L-1

1

Electrical ratings

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

VDS

Drain-source voltage (VGS = 0)

VGS

Gate- source voltage

ID

Drain current (continuous) at TC = 25°C

ID

IDM(1)

Drain current (continuous) at TC = 100°C

Drain current (pulsed)

Ptot

Total dissipation at TC = 25°C

Derating Factor

dv/dt(2) Peak diode recovery voltage slope

EAS (3)

Single pulse avalanche energy

Tstg

Storage temperature

Tj

Max. operating junction temperature

1. Pulse width limited by safe operating area.

2. ISD ≤40A, di/dt ≤350A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX.

3. Starting Tj = 25 oC, ID = 17.5A, VDD =24V

Value

55

± 15

60

42

240

110

0.73

16

400

-55 to 175

Unit

V

V

A

A

A

W

W/°C

V/ns

mJ

°C

Table 2. Thermal data

Rthj-case Thermal resistance junction-case max

Rthj-amb Thermal resistance junction-to ambient max

TJ

Maximum lead temperature for soldering purpose

1.36

°C/W

62.5

°C/W

275

°C

3/14

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