STD60NF55L データシートの表示（PDF） - STMicroelectronics

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STD60NF55L

N-channel 55V - 0.012Ω - 60A - DPAK/IPAK STripFET™ II Power MOSFET

STMicroelectronics 

STD60NF55L - STD60NF55L-1

Electrical characteristics

Table 5. Source drain diode

Symbol

Parameter

Test conditions

Min.

ISD

ISDM (1)

Source-drain current

Source-drain current

(pulsed)

VSD (2) Forward on voltage

ISD = 60A, VGS = 0

trr

Qrr

IRRM

Reverse recovery time ISD = 40A, di/dt = 100A/µs,

Reverse recovery charge VDD = 25V, Tj = 150°C

Reverse recovery current (see Figure 14)

1. Pulse width limited by safe operating area.

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Typ.

65

130

4

Max. Unit

60

A

240 A

1.3 V

ns

nC

A

5/14

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