STSJ2NM60 データシートの表示（PDF） - STMicroelectronics
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STSJ2NM60
STMicroelectronics
STSJ2NM60 Datasheet PDF : 8 Pages
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ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 300 V, ID = 1 A
RG = 4.7Ω VGS = 10 V
(see test circuit, Figure 3)
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 480 V, ID = 2 A,
VGS = 10 V
SWITCHING OFF
Symbol
Parameter
tr(Voff)
tf
tc
Off-Voltage Rise Time
Fall Time
Cross-Over Time
Test Conditions
VDD = 480 V, ID = 2 A,
RG = 4.7Ω, VGS = 10 V
(see test circuit, Figure 3)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
Source-drain Current
ISDM (2) Source-drain Current (pulsed)
VSD (4) Forward On Voltage
ISD = 2 A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 2, di/dt = 100A/µs,
VDD = 100 V, Tj = 25°C
(see test circuit, Figure 5)
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 2, di/dt = 100A/µs,
VDD = 100 V, Tj = 150°C
(see test circuit, Figure 5)
Note: 1. When mounted on 1inch² FR4 Board, 2oz of Cu, t ≤ 10 sec.
2. Pulse width limited by safe operating area
3. ISD<3.3A, di/dt<400A/µs, VDD<V(BR)DSS, TJ<TJMAX
4. Pulsed: Pulse duration = 400 µs, duty cycle 1.5 %
GATE-SOURCE ZENER DIODE
Symbol
Parameter
BVGSO
Gate-Source Breakdown
Voltage
Test Conditions
Igs=± 1mA (Open Drain)
STSJ2NM60
Min. Typ. Max. Unit
13
ns
8
ns
6
8.4
nC
1.8
nC
3.3
nC
Min.
Typ.
12
25
30
Max.
Unit
ns
ns
ns
Min. Typ. Max. Unit
2
A
8
A
1.5
V
516
ns
516
nC
2
A
808
ns
890
nC
2.2
A
Min.
30
Typ.
Max.
Unit
V
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
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