STD40NF06 データシートの表示（PDF） - STMicroelectronics

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STD40NF06

N-CHANNEL 60V - 0.024 Ω - 40A DPAK STripFET™ II POWER MOSFET

STMicroelectronics 

STD40NF06

THERMAL DATA

Rthj-case Thermal Resistance Junction-case

Max

1.76

Rthj-PCB Thermal Resistance Junction-PCB (#)

Max

50

Tl

Maximum Lead Temperature For Soldering Purpose

275

(#) When Mounted on 1 inch2 FR-4 board, 2 oz Cu.

ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)

OFF

Symbol

Parameter

Test Conditions

Min. Typ.

V(BR)DSS Drain-source

ID = 250 µA, VGS = 0

60

Breakdown Voltage

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating TC = 100°C

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 20 V

°C/W

°C/W

°C

Max.

Unit

V

1

µA

10

µA

±100

nA

ON (*)

Symbol

VGS(th)

RDS(on)

Parameter

Gate Threshold Voltage

Static Drain-source On

Resistance

Test Conditions

VDS = VGS

ID = 250 µA

VGS = 10 V

ID = 20 A

Min.

2

Typ.

0.024

Max.

4

0.028

Unit

V

Ω

DYNAMIC

Symbol

gfs (*)

Ciss

Coss

Crss

Parameter

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

Test Conditions

VDS = 30 V

ID = 20 A

VDS = 25V, f = 1 MHz, VGS = 0

Min.

Typ.

13

920

225

80

Max.

Unit

S

pF

pF

pF

2/9

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