STD40NF06 データシートの表示（PDF） - STMicroelectronics
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STD40NF06 Datasheet PDF : 9 Pages
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STD40NF06
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
td(on)
Turn-on Delay Time
VDD = 30 V
ID = 20 A
11
ns
tr
Rise Time
RG = 4.7 Ω
VGS = 10 V
50
ns
(Resistive Load, Figure 3)
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 48V ID = 40A VGS= 10V
32
43
nC
6.5
nC
15
nC
SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off Delay Time
Fall Time
Test Conditions
VDD = 30 V
ID = 20 A
RG = 4.7Ω, VGS = 10 V
(Resistive Load, Figure 3)
Min.
Typ.
27
11
Max.
Unit
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM (•)
Source-drain Current
Source-drain Current (pulsed)
VSD (*) Forward On Voltage
ISD = 40 A
VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ISD = 40 A
di/dt = 100A/µs
VDD = 10 V
Tj = 150°C
(see test circuit, Figure 5)
Min.
Typ.
63
150
4.8
Max.
40
160
1.3
Unit
A
A
V
ns
nC
A
Safe Operating Area
Thermal Impedance
3/9
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