STP30NE06L データシートの表示（PDF） - STMicroelectronics

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STP30NE06L

N - CHANNEL 60V - 0.035 Ω - 30A - TO-220/TO-220FP STripFET POWER MOSFET

STMicroelectronics 

STP30NE06L

®

STP30NE06LFP

N - CHANNEL 60V - 0.035 Ω - 30A - TO-220/TO-220FP

STripFET™ POWER MOSFET

TYPE

VDSS

RDS( on )

STP30NE06L

S TP30N E06LF P

60 V

60 V

< 0.05 Ω

< 0.05 Ω

s TYPICAL RDS(on) = 0.035 Ω

s 100% AVALANCHE TESTED

s LOW GATE CHARGE

s APPLICATION ORIENTED

CHARACTERIZATION

ID

30 A

17 A

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronics unique ”Single Feature

Size™” strip-based process. The resulting transi-

stor shows extremely high packing density for low

on-resistance, rugged avalanche characteristics

and less critical alignment steps therefore a re-

markable manufacturing reproducibility.

APPLICATIONS

s DC MOTOR CONTROL

s DC-DC & DC-AC CONVERTERS

s SYNCHRONOUS RECTIFICATION

3

2

1

TO-220

3

2

1

TO-220FP

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symb ol

Pa ram et er

VDS Drain-source Voltage (VGS = 0)

VDGR Drain- gate Voltage (RGS = 20 kΩ)

VGS

ID

ID

IDM(•)

Ptot

G ate-source Voltage

Drain Current (continuous) at Tc = 25 oC

Drain Current (continuous) at Tc = 100 oC

Drain Current (pulsed)

Total Dissipation at Tc = 25 oC

Derating Factor

VISO I nsulation W ithstand Voltage (DC)

Ts tg Storage T emperature

Tj

Max. O perating Junct ion T emperature

(•) Pulse width limited by safe operating area

March 1999

Va l u e

STP30NE06L STP30NE06LFP

60

60

± 20

30

17

21

12

120

68

80

30

0.53

0.2



20 00

-65 to 175

175

Unit

V

V

V

A

A

A

W

W/oC

V

oC

oC

1/9

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