STD12NE06L データシートの表示（PDF） - STMicroelectronics

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STD12NE06L

N - CHANNEL 60V - 0.09Ω - 12A TO-251/TO-252 STripFET™ POWER MOSFET

STMicroelectronics 

®

STD12NE06L

N - CHANNEL 60V - 0.09Ω - 12A TO-251/TO-252

STripFET™ POWER MOSFET

TYPE

V DSS

RDS(on)

ID

STD12NE06L

60 V

< 0.12 Ω

12 A

s TYPICAL RDS(on) = 0.09 Ω

s EXCEPTIONAL dv/dt CAPABILITY

s AVALANCHE RUGGED TECHNOLOGY

s 100 % AVALANCHE TESTED

s APPLICATION ORIENTED

CHARACTERIZATION

s ADD SUFFIX ”T4” FOR ORDERING IN TAPE

& REEL

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronics unique ”Single Feature

Size™” strip-based process. The resulting transi-

stor shows extremely high packing density for low

on-resistance, rugged avalanche characteristics

and less critical alignment steps therefore a re-

markable manufacturing reproducibility.

APPLICATIONS

s DC MOTOR CONTROL (DISK DRIVES,etc.)

s DC-DC & DC-AC CONVERTERS

s SYNCHRONOUS RECTIFICATION

3

2

1

3

1

IPAK

TO-251

(Suffix ”-1”)

DPAK

TO-252

(Suffix ”T4”)

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

S ymb ol

Parameter

VDS

VDGR

VG S

ID

ID

IDM(•)

Ptot

Drain-source Volt age (VGS = 0)

Drain- gate Voltage (RGS = 20 kΩ)

Gate-source Voltage

Drain Current (continuous) at Tc = 25 oC

Drain Current (continuous) at Tc = 100 oC

Drain Current (pulsed)

Tot al Dissipation at Tc = 25 oC

Derating Factor

dv/dt(1 ) Peak Diode Recovery voltage slope

Tstg Storage T emperature

Tj

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

January 2000

Va l u e

Unit

60

V

60

V

± 20

V

12

A

8

A

48

A

35

0.23

W

W /o C

6

V/ns

-65 to 175

oC

175

oC

( 1) ISD ≤ 12 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

1/9

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