STD35NF06L(2003) データシートの表示（PDF） - STMicroelectronics

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STD35NF06L
(Rev.:2003)

N-CHANNEL 60V - 0.014 Ω - 35A DPAK STripFET™ II POWER MOSFET

STMicroelectronics 

STD35NF06L

N-CHANNEL 60V - 0.014 Ω - 35A DPAK

STripFET™ II POWER MOSFET

TYPE

VDSS

RDS(on)

ID

STD35NF06L

60 V < 0.017 Ω

35 A

s TYPICAL RDS(on) = 0.014 Ω

s LOW THRESHOLD DRIVE

s GATE CHARGE MINIMIZED

s SURFACE-MOUNTING DPAK (TO-252)

POWER PACKAGE IN TAPE & REEL

(SUFFIX “T4")

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronis unique "Single Feature Size™" strip-

based process. The resulting transistor shows extremely

high packing density for low on-resistance, rugged

avalanche characteristics and less critical alignment

steps therefore a remarkable manufacturing

reproducibility.

APPLICATIONS

s DC-AC CONVERTERS

s AUTOMOTIVE SWITCHING APPLICATION

3

1

DPAK

TO-252

(Suffix “T4”)

INTERNAL SCHEMATIC DIAGRAM

Ordering Information

SALES TYPE

STD35NF06LT4

MARKING

D35NF06L

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VDS

VDGR

VGS

ID

ID

IDM(•)

Ptot

Drain-source Voltage (VGS = 0)

Drain-gate Voltage (RGS = 20 kΩ)

Gate- source Voltage

Drain Current (continuous) at TC = 25°C

Drain Current (continuous) at TC = 100°C

Drain Current (pulsed)

Total Dissipation at TC = 25°C

Derating Factor

dv/dt (1) Peak Diode Recovery voltage slope

EAS (2) Single Pulse Avalanche Energy

Tstg

Storage Temperature

Tj

Operating Junction Temperature

(•) Pulse width limited by safe operating area.

November 2003

PACKAGE

TO-252

PACKAGING

TAPE & REEL

Value

60

60

± 16

35

24.5

140

80

0.67

5

280

Unit

V

V

V

A

A

A

W

W/°C

V/ns

mJ

-55 to 175

°C

(1) ISD ≤35A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

(2) Starting Tj = 25 oC, ID = 30A, VDD =30V

1/9

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