STD35NF06LT4(2003) データシートの表示（PDF） - STMicroelectronics
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コンポーネント説明
メーカー
STD35NF06LT4
(Rev.:2003)
(Rev.:2003)
STMicroelectronics
STD35NF06LT4 Datasheet PDF : 9 Pages
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STD35NF06L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
td(on)
Turn-on Delay Time
VDD = 30 V
ID =27.5 A
20
ns
tr
Rise Time
RG = 4.7 Ω
VGS = 4.5 V
100
ns
(Resistive Load, Figure 3)
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD= 48 V ID= 55 A VGS=4.5 V
25
33
nC
5
nC
10
nC
SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off Delay Time
Fall Time
Test Conditions
VDD = 30 V
ID =27.5 A
RG = 4.7 Ω
VGS = 4.5 V
(Resistive Load, Figure 3)
Min.
Typ.
40
20
Max.
Unit
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM (•)
Source-drain Current
Source-drain Current (pulsed)
VSD (*) Forward On Voltage
ISD = 35 A
VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ISD = 35 A
di/dt = 100A/µs
VDD = 30 V
Tj = 150°C
(see test circuit, Figure 5)
Min.
Typ.
80
200
5
Max.
35
140
1.5
Unit
A
A
V
ns
QC
A
Safe Operating Area
Thermal Impedance
3/9
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