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STD35NF06L データシートの表示(PDF) - STMicroelectronics
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STD35NF06L
N-channel 60 V, 0.014 Ω, 35 A STripFET™ II Power MOSFET in a DPAK package
STMicroelectronics
STD35NF06L Datasheet PDF : 14 Pages
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STD35NF06L
Electrical characteristics
Table 6. Source drain diode
Symbol
Parameter
Test conditions
I
SD
I
SDM
(1)
V
SD
(2)
t
rr
Q
rr
I
RRM
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
I
SD
= 35 A, V
GS
= 0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 35 A,
di/dt = 100 A/µs,
V
DD
= 30 V, T
j
= 150 °C
(see
Figure 15
)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max. Unit
35
A
-
140 A
-
1.5 V
80
ns
-
200
nC
5
A
Doc ID 7662 Rev 5
5/14
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