STD35NF06T4 データシートの表示（PDF） - STMicroelectronics

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STD35NF06T4

N-channel 60V - 0.018Ω - 35A - DPAK STripFET™ II Power MOSFET

STMicroelectronics 

STD35NF06

1

Electrical ratings

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

VDS

VDGR

VGS

ID

ID

IDM(1)

Ptot

dv/dt(2)

Drain-source voltage (VGS = 0)

Drain-gate voltage (RGS = 20 kΩ)

Gate- source voltage

Drain current (continuous) at TC = 25°C

Drain current (continuous) at TC = 100°C

Drain current (pulsed)

Total dissipation at TC = 25°C

Derating Factor

Peak diode recovery avalanche energy

Tstg

Storage temperature

Tj

Max. operating junction temperature

1. Pulse width limited by safe operating area.

2. ISD ≤35A, di/dt ≤100A/µs, VDD =V(BR)DSS, Tj ≤TJMAX

Value

60

60

± 20

35

24.5

140

80

0.53

5

-55 to 175

Unit

V

V

V

A

A

A

W

W/°C

V/ns

°C

Table 2. Thermal data

Rthj-case Thermal resistance junction-case max

Rthj-amb Thermal resistance junction-to ambient max

TJ

Maximum lead temperature for soldering purpose

1.88

°C/W

100

°C/W

275

°C

Table 3. Avalanche characteristics

Symbol

Parameter

Avalanche Current, Repetitive Or Not-

IAR

repetitive

(pulse width limited by Tj max)

Single pulse avalanche energy

EAS

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

Max value

Unit

17.5

A

130

mJ

3/13

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