STD35NF06T4 データシートの表示（PDF） - STMicroelectronics

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STD35NF06T4

N-channel 60V - 0.018Ω - 35A - DPAK STripFET™ II Power MOSFET

STMicroelectronics 

STD35NF06

Electrical characteristics

Table 6. Source drain diode

Symbol

Parameter

Test conditions

Min.

ISD

ISDM (1)

Source-drain current

Source-drain current

(pulsed)

VSD (2) Forward on voltage

ISD = 35A, VGS = 0

trr

Qrr

IRRM

Reverse recovery time ISD = 35A, di/dt = 100A/µs,

Reverse recovery charge VDD = 20V, Tj = 150°C

Reverse recovery current (see Figure 14)

1. Pulse width limited by safe operating area.

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Typ.

75

170

4.5

Max. Unit

35

A

140 A

1.5 V

ns

µC

A

5/13

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