STP9NK65Z データシートの表示（PDF） - STMicroelectronics
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STP9NK65Z
STMicroelectronics
STP9NK65Z Datasheet PDF : 7 Pages
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STP9NK65Z - STP9NK65ZFP
Electrical characteristics
Table 7. Switching times
Symbol
Parameter
td(on)
tr
Turn-on delay time
Rise time
td(off)
tf
Turn-off delay time
Fall time
Test conditions
VDD = 325 V, ID = 3.2 A
RG = 4.7 Ω VGS = 10 V
(see Figure 17)
VDD = 325 V, ID = 3.2 A
RG = 4.7 Ω VGS = 10 V
(See Figure 17)
Min.
Typ. Max. Unit
20
ns
12
ns
45
ns
15
ns
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 6.4 A, VGS = 0
ISD = 6.4 A,
di/dt = 100 A/µs
VDD = 50 V, Tj = 150 °C
(see Figure 19)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max. Unit
6.4 A
25.6 A
1.6 V
400
ns
2600
nC
13
A
Table 9. Gate-source zener diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
BVGSO(1)
Gate-source breakdown voltage
Igs=±1 mA
(open drain)
30
V
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
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