STL5NK65Z データシートの表示（PDF） - STMicroelectronics
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STL5NK65Z
STMicroelectronics
STL5NK65Z Datasheet PDF : 6 Pages
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STL5NK65Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
ID = 1 mA, VGS = 0
650
Breakdown Voltage
IDSS
Zero Gate Voltage
VDS = Max Rating
1
Drain Current (VGS = 0)
VDS = Max Rating, TC = 125 °C
50
IGSS
Gate-body Leakage
VGS = ± 20V
±10
Current (VDS = 0)
VGS(th) Gate Threshold Voltage
VDS = VGS, ID = 50µA
3
3.75
4.5
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 2.1 A
1.5
1.8
DYNAMIC
Symbol
gfs (1)
Ciss
Coss
Crss
Coss eq. (3)
RG
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
Gate Input Resistance
SWITCHING
Symbol
Parameter
td(on)
tf
td(off)
tf
Turn-on Delay Time
Fall Time
Turn-off Delay Time
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Test Conditions
VDS = 10 V, ID = 2.1 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
VGS = 0V, VDS = 0V to 480 V
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
Test Conditions
VDD = 325 V, ID = 2.1 A
RG = 4.7Ω VGS = 10 V
(Resistive Load see, Figure 3)
VDD = 520V, ID = 4.2 A,
VGS = 10V
Min.
Typ.
5
680
80
17
98
4
Typ.
20
15
140
40
25
4.4
13.7
Max.
Max.
35
Unit
V
µA
µA
µA
V
Ω
Unit
S
pF
pF
pF
pF
Ω
Unit
ns
ns
ns
ns
nC
nC
nC
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
0.76
A
3
A
VSD (1) Forward On Voltage
ISD = 0.76 A, VGS = 0
1.6
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 4.2 A, di/dt = 100A/µs
VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)
375
ns
1.76
µC
10
A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
3/6
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