STGB10NB37LZ データシートの表示（PDF） - STMicroelectronics

部品番号

コンポーネント説明

メーカー

STGB10NB37LZ

N-CHANNEL CLAMPED 20A - D2PAK INTERNALLY CLAMPED PowerMesh™ IGBT

STMicroelectronics 

STGB10NB37LZ

N-CHANNEL CLAMPED 20A - D2PAK

INTERNALLY CLAMPED PowerMesh™ IGBT

TYPE

VCES

VCE(sat)

IC

STGB10NB37LZ CLAMPED < 1.8 V

20 A

s POLYSILICON GATE VOLTAGE DRIVEN

s LOW THRESHOLD VOLTAGE

s LOW ON-VOLTAGE DROP

s LOW GATE CHARGE

s HIGH CURRENT CAPABILITY

s HIGH VOLTAGE CLAMPING FEATURE

DESCRIPTION

Using the latest high voltage technology based on a

patented strip layout, STMicroelectronics has

designed an advanced family of IGBTs, the

PowerMESH™ IGBTs, with outstanding

performances. The built in collector-gate zener

exhibits a very precise active clamping while the

gate-emitter zener supplies an ESD protection.

3

1

D2PAK

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

s AUTOMOTIVE IGNITION

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VCES

Collector-Emitter Voltage (VGS = 0)

VECR

Reverse Battery Protection

VGE

Gate-Emitter Voltage

IC

Collector Current (continuos) at TC = 100°C

ICM

Collector Current (pulse width < 100µs)

PTOT

Total Dissipation at TC = 25°C

Derating Factor

ESD

ESD (Human Body Model)

Tstg

Storage Temperature

Tj

Max. Operating Junction Temperature

June 2001

Value

CLAMPED

18

CLAMPED

20

60

125

0.83

4

–65 to 175

175

Unit

V

V

V

A

A

W

W/°C

KV

°C

°C

1/10

Share Link: