BSH103 データシートの表示（PDF） - Philips Electronics

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BSH103

N-channel enhancement mode MOS transistor

Philips Electronics 

Philips Semiconductors

N-channel enhancement mode

MOS transistor

Product specification

BSH103

FEATURES

• Very low threshold

• High-speed switching

• No secondary breakdown

• Direct interface to C-MOS, TTL etc.

PINNING - SOT23

PIN

SYMBOL

1

g

2

s

3

d

DESCRIPTION

gate

source

drain

APPLICATIONS

• Power management

• DC to DC converters

• Battery powered applications

• ‘Glue-logic’; interface between logic blocks and/or

periphery

• General purpose switch.

DESCRIPTION

N-channel enhancement mode MOS transistor in a SOT23

SMD package.

handbook, halfpage

3

d

g

1

Top view

s

2

MAM273

Fig.1 Simplified outline and symbol.

QUICK REFERENCE DATA

SYMBOL

VDS

VSD

VGS

VGSth

ID

RDSon

Ptot

PARAMETERS

drain-source voltage (DC)

source-drain diode forward voltage

gate-source voltage (DC)

gate-source threshold voltage

drain current (DC)

drain-source on-state resistance

total power dissipation

CONDITIONS

VGD = 0; IS = 0.5 A

VDS = VGS; ID = 1 mA

Ts = 80 °C

VGS = 2.5 V; ID = 0.5 A

Ts = 80 °C

MIN.

−

−

−

0.4

−

−

−

MAX.

30

1

±8

−

0.85

0.5

0.5

UNIT

V

V

V

V

A

Ω

W

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport

and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.

1998 Feb 11

2

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