BSH103 データシートの表示（PDF） - Philips Electronics
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BSH103 Datasheet PDF : 12 Pages
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Philips Semiconductors
N-channel enhancement mode
MOS transistor
Product specification
BSH103
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VDS
drain-source voltage (DC)
VGS
gate-source voltage (DC)
ID
drain current (DC)
IDM
peak drain current
Ptot
total power dissipation
Tstg
storage temperature
Tj
operating junction temperature
Source-drain diode
IS
source current (DC)
ISM
peak pulsed source current
CONDITIONS
Ts = 80 °C; note 1
note 2
Ts = 80 °C
Tamb = 25 °C; note 3
Tamb = 25 °C; note 4
Ts = 80 °C
note 2
MIN.
−
−
−
−
−
−
−
−55
−55
−
−
Notes
1. Ts is the temperature at the soldering point of the drain lead.
2. Pulse width and duty cycle limited by maximum junction temperature.
3. Device mounted on printed-circuit board with an Rth a-tp (ambient to tie-point) of 27.5 K/W.
4. Device mounted on printed-circuit board with an Rth a-tp (ambient to tie-point) of 90 K/W.
MAX.
30
±8
0.85
3.4
0.5
0.75
0.54
+150
+150
0.5
2
UNIT
V
V
A
A
W
W
W
°C
°C
A
A
0.6
handbook, halfpage
Ptot
(W)
0.4
MGM190
0.2
0
0
40
80
120
160
Ts (°C)
Fig.2 Power derating curve.
1998 Feb 11
handbook,1h0alfpage
IDS
(A)
1
(1)
MBK502
(2)
10−1
P
10−2
δ=
tp
T
10−130−1
tp
t
T
1
DC
10 VDS (V) 102
δ = 0.01; Ts = 80 °C.
(1) RDSon limitation.
(2) Pulsed.
Fig.3 SOAR.
3
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