BSH103 データシートの表示（PDF） - Philips Electronics
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BSH103 Datasheet PDF : 12 Pages
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Philips Semiconductors
N-channel enhancement mode
MOS transistor
Product specification
BSH103
handbook, full pagewidth
Vin
VDD
RL
Vout
Vin
0
Vout
0
MAM274
90 %
10 %
90 %
10 %
td(on)
tf
ton
td(off)
tr
toff
Fig.5 Switching times test circuit with input and output waveforms.
5
handbook, halfpage
VGS
(V)
4
3
(1)
2
1
0
MBK507
16
VDS
14 (V)
12
4
handbook, halfp(1a)g(e2) (3)(4) (5)
ID
(A)
3
MBK505
(6)
10
2
(7)
8
(2)
6
1
(8)
4
2
0
(9)
0
2
4
6
8
10
0
VDS (V)
QG (pC)
VDD = 15 V; ID = 0.5 A; Tamb = 25 °C.
(1) VDS.
(2) VGS.
Fig.6 Gate-source and drain-source voltages as
functions of total gate charge; typical values.
Tamb = 25 °C; tp = 300 µs; δ = 0.
(1) VGS = 7.5 V.
(2) VGS = 5.5 V.
(3) VGS = 4.5 V.
(4) VGS = 3.5 V.
(5) VGS = 3 V.
(6) VGS = 2.5 V.
(7) VGS = 2 V.
(8) VGS = 1.5 V.
(9) VGS = 1 V.
Fig.7 Output characteristics; typical values.
1998 Feb 11
6
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