BUZ72A データシートの表示（PDF） - STMicroelectronics

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コンポーネント説明

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BUZ72A

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

STMicroelectronics 

ELECTRICAL CHARACTERISTICS (continued)

SOURCE DRAIN DIODE

Symb ol

Parameter

Test Conditions

IS D

ISD M

Source-drain Current

Source-drain Current

(pulsed)

VSD (∗) Forward On Voltage

ISD = 22 A VGS = 0

trr

Reverse Recovery

Time

Qrr Reverse Recovery

Charge

ISD = 11 A

VDD = 20 V

(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

di/dt = 100 A/µs

Tj = 150 oC

BUZ72A

Min.

Typ.

Max.

11

44

Unit

A

A

1.6

V

80

ns

0. 22

µC

Safe Operating Area

Thermal Impedance

Derating Curve

Output Characteristics

3/7

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