VN2222 データシートの表示（PDF） - Calogic, LLC

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VN2222

N-Channel Enhancement-Mode MOS Transistors

Calogic, LLC 

CORPORATION

VN2222 Series

SPECIFICATIONSa

SYMBOL

PARAMETER

STATIC

V(BR)DSS Drain-Source Breakdown Voltage

VGS(th)

Gate-Threshold Voltage

IGSS

Gate-Body Leakage

TYPb

70

2.3

IDSS

Zero Gate Voltage Drain Current

ID(ON)

On-State Drain Currentc

rDS(ON)

Drain-Source On-Resistancec

gFS

Forward Transconductancec

gOS

Common Source Output Conductancec

DYNAMIC

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

SWITCHING

1000

5

2.5

4.4

230

1200

16

11

2

tON

Turn-On Time

7

tOFF

Turn-Off Time

7

Notes:

a. TA = 25oC unless otherwise noted.

b. For design aid only, not subject to production testing.

c. Pulse test; PW = ≤300µS, duty cycle ≤2%.

LIMITS

MIN MAX

60

0.6

2.5

±100

10

500

750

7.5

7.5

13.5

100

60

25

5

10

10

UNIT

TEST CONDITIONS

ID = 100µA, VGS = 0V

V

VDS = VGS, ID = 1mA

nA VGS = ±20V, VDS = 0V

VDS = 48V, VGS = 0V

µA

TJ = 125oC

mA VDS = 10V, VGS = 10V

VGS = 5V, ID = 0.2A

Ω

VGS = 10V, ID = 0.5A

TJ = 125oC

mS VDS = 10V, ID = 0.5A

µS VDS = 10V, ID = 0.2A

pF VDS = 25V, VGS = 0V, f = 1MHz

VDD = 15V, RL = 23Ω, ID = 0.6A

VGEN = 10V, RG = 25Ω

ns

(Switching time is essentially independent of

operating temperature)

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