H603AL データシートの表示（PDF） - Hi-Sincerity Microelectronics

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H603AL

N-Channel Logic Level Enhancement Mode Field Effect Transistor

Hi-Sincerity Microelectronics 

HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : Preliminary Data

Issued Date : 1998.07.01

Revised Date : 1999.08.01

Page No. : 3/5

Drain Current Variation & Gate Voltage &

Temperature

50

TJ= 25°C

40

TJ=125°C

30

20

10

0

0

1

2

3

4

5

6

Gate-Source Voltage (V)

Gate Threshold Variation & Temperature

1.8

1.7

1.6

1.5

ID=10mA

1.4

ID=1mA

1.3

1.2

ID= 250uA

1.1

1

0.9

0.8

25

50

75

100

125

150

Junction Temperature (°C)

Breakdown Voltage Variation & Temperature

1.1

1.08

1.06

1.04

1.02

1

0.98

25

50

75

100

125

150

Junction Temperature (°C)

Sub-Threshold Drain Current Variation & Gate

Voltage & Temperature

0.06

0.05

TJ=125°C

TJ=25°C

0.04

0.03

0.02

0.01

0

0.5

1.0

1.5

2.0

2.5

Gate-Source Voltage (V)

Capacitance Characteristics

2000

1500

1000

500

0

0

Ciss

Coss

Crss

5

10

15

20

25

30

Drain-Source Voltage (V)

Body Diode Forward Voltage Variation &

Current & Temperature

100

TJ=125°C

TJ= 25°C

10

1

0.1

0.2

0.4

0.6

0.8

1

1.2

Body Diode Forward Voltage (V)

HSMC Product Specification

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