IRF541 データシートの表示（PDF） - Harris Semiconductor

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IRF541

N-channel power MOSFET, 100V, 28A

Harris Semiconductor 

Semiconductor

November 1997

IRF540, IRF541, IRF542,

IRF543, RF1S540, RF1S540SM

25A and 28A, 80V and 100V, 0.077 and 0.100 Ohm,

N-Channel Power MOSFETs

Features

• 25A and 28A, 80V and 100V

• rDS(ON) = 0.077Ω and 0.100Ω

• Single Pulse Avalanche Energy Rated

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Description

These are N-Channel enhancement mode silicon gate

power field effect transistors. They are advanced power

MOSFETs designed, tested, and guaranteed to withstand a

specified level of energy in the breakdown avalanche mode

of operation. All of these power MOSFETs are designed for

applications such as switching regulators, switching conver-

tors, motor drivers, relay drivers, and drivers for high power

bipolar switching transistors requiring high speed and low

gate drive power. These types can be operated directly from

integrated circuits.

Formerly developmental type TA17421.

Ordering Information

PART NUMBER

PACKAGE

BRAND

IRF540

TO-220AB

IRF540

IRF541

TO-220AB

IRF541

IRF542

TO-220AB

IRF542

IRF543

TO-220AB

IRF543

RF1S540

TO-262AA

RF1S540

RF1S540SM

TO-263AB

RF1S540SM

NOTE: When ordering, use the entire part number. Add the suffix 9A to

obtain the TO-263AB variant in the tape and reel, i.e., RF1S540SM9A.

Symbol

D

G

S

Packaging

JEDEC TO-220AB

DRAIN (FLANGE)

SOURCE

DRAIN

GATE

JEDEC TO-262AA

DRAIN

(FLANGE)

SOURCE

DRAIN

GATE

JEDEC TO-263AB

GATE

SOURCE

DRAIN

(FLANGE)

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.

Copyright © Harris Corporation 1997

5-1

File Number 2309.3

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