IRF541 データシートの表示（PDF） - Harris Semiconductor
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IRF541 Datasheet PDF : 7 Pages
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IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM
Typical Performance Curves Unless Otherwise Specified
1.2
30
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150 175
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
24
IRF540, IRF541
RF1S540, RF1S540SM
18
IRF542, IRF543
12
6
0
25
50
75
100
125
150
175
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
10
1
0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
10-5
PDM
SINGLE PULSE
10-4
10-3
10-2
10-1
t1, RECTANGULAR PULSE DURATION (s)
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
t1
NOTES:
t2
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
1
10
IRF540, 1, RF1S540, SM
100
IRF542, 3
IRF540, 1, RF1S540, SM
TC = 25oC
10µs
100µs
IRF542, 3
10
1ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
TJ = MAX RATED
SINGLE PULSE
10ms
IRF541, 3
DC
11
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
80µs PULSE TEST
50
VGS = 10V
40
VGS = 8V
VGS = 7V
30
VGS = 6V
20
10
0
0
VGS = 5V
VGS = 4V
12
24
36
48
60
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. OUTPUT CHARACTERISTICS
5-4
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