IRF510 データシートの表示（PDF） - Harris Semiconductor
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IRF510 Datasheet PDF : 7 Pages
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IRF510, IRF511, IRF512, IRF513
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
IRF510
IRF511
IRF512
IRF513 UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . VDS
100
80
100
80
V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1). . . . . . . . . . VDGR
100
80
100
80
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
5.6
5.6
4.9
4.9
A
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
4
4
3.4
3.4
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . IDM
20
20
18
18
A
Gate to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±20
±20
±20
±20
V
Maximum Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . PD
43
43
43
43
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.29
0.29
0.29
0.29
W/oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . EAS
19
19
19
19
mJ
Operating and Storage Temperature Range. . . . . . . . . TJ, TSTG -55 to 175
-55 to 175
-55 to 175
-55 to 175
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from 25ase for 10s . . . . . . . . . . TL
300
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . .Tpkg
260
300
260
300
260
300
oC
260
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
IRF510 IRF512
BVDSS VGS = 0V, ID = 250µA, (Figure 10)
100 -
-
V
IRF511, IRF513
80
-
-
V
Gate to Threshold Voltage
Zero-Gate Voltage Drain Current
On-State Drain Current (Note 2)
IRF510, IRF511
VGS(TH) VGS = VDS, ID = 250µA
2.0
-
4.0
V
IDSS VDS = Rated BVDSS, VGS = 0V
-
VDS = 0.8 x Rated BVDSS, VGS = 0V TJ = 150oC -
-
25
µA
-
250 µA
ID(ON)
VDS > ID(ON) x rDS(ON)MAX, VGS = 10V,
(Figure 7)
5.6
-
-
A
IRF512, IRF513
4.9
-
-
A
Gate to Source Leakage Current
IGSS
Drain to Source On Resistance (Note 2) rDS(ON)
IRF510, IRF511
VGS = ±20V
VGS = 10V, ID = 3.4A, (Figures 8, 9)
-
- ±100 nA
-
0.4 0.54
Ω
IRF512, IRF513
-
0.5 0.74
Ω
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
gfs
VGS = 50V, ID = 3.4A, (Figure 12)
1.3 2.0
-
S
td(ON)
tr
td(OFF)
ID ≈ 5.6A, RGS = 24Ω , VDD = 50V, RL = 9Ω
VDD = 50V, VGS = 10V, (Figures 17, 18)
MOSFET switching times are essentially
independent of operating temperature
-
8
11
ns
-
25 36
ns
-
15 21
ns
tf
-
12 21
ns
Qg(TOT) VGS = 10V, ID = 5.6A, VDS = 0.8 x Rated BVDSS, -
5.0 7.7
nC
IG(REF) = 1.5mA (Figures 14, 19, 20)
Gate charge is essentially independent of
Qgs operating temperature
-
2.0
-
nC
Qgd
-
3.0
-
nC
5-2
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