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IRF510 データシートの表示(PDF) - Harris Semiconductor

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IRF510 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
IRF510, IRF511, IRF512, IRF513
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75 100 125 150 175
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs
CASE TEMPERATURE
10
8
6
IRF510, IRF511
4
IRF512, IRF513
2
0
25
50
75
100
125
150
175
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
10
0.5
1
0.2
0.1
0.05
0.1
0.02
0.01
SINGLE PULSE
0.01
10-5
10-4
10-3
10-2
0.1
t1, RECTANGULAR PULSE DURATION (S)
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
1
10
100
IRF510, 1
10 IRF512, 3
IRF510, 1
IRF512.3
OPERATION IN THIS
REGION IS LIMITED
BY rDS(ON)
10µs
100µs
1ms
1
TC = 25oC
TJ = 175oC
IRF511, 3
DC
IRF510, 2
SINGLE PULSE
0.1
1
10
102
103
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
10
VGS = 10V
80µs PULSE TEST
8
VGS = 8V
6
VGS = 7V
4
VGS = 6V
2
VGS = 5V
0
VGS = 4V
0
10
20
30
40
50
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. OUTPUT CHARACTERISTICS
5-4

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