NTE312 データシートの表示（PDF） - NTE Electronics

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NTE312

N–Channel Silicon Junction Field Effect Transistor

NTE Electronics 

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

OFF Characteristics

Gate–Source Breakdown Voltage V(BR)GSS IG = –1.0µA, VDS = 0

–30 –

–

V

Gate Reverse Current

IGSS VGS = –20V, VDS = 0

–

– –1.0 nA

Gate 1 Leakage Current

IG1SS VG1S = –20V, VDS = 0, TA = +100°C –

– –0.5 µA

Gate–Source Cutoff Voltage

VGS(off) VDS = 15V, ID = 10mA

–1.0 – –6.0 V

ON Characteristics

Zero–Gate Voltage Drain Current

Small–Signal Characteristics

IDSS VDS = 15V, VGS = 0, Note 1

5.0 – 15 mA

Forward Transfer Admittance

Input Admittance

|yfs|

Re(yis)

VDS = 15V, VGS = 0, f = 1kHz

100MHz VDS = 15V, VGS = 0

400MHz

4500 – 7500 µmhos

–

– 100 µmhos

–

– 1000 µmhos

Output Admittance

Output Conductance

|yos|

Re(yos)

VDS = 15V, VGS = 0, f = 1kHz

100MHz VDS = 15V, VGS = 0

400MHz

–

– 50 µmhos

–

– 75 µmhos

–

– 100 µmhos

Forward Transconductance

Input Capacitance

Reverse Transfer Capacitance

Input Susceptance

Re(yfs)

Ciss

Crss

IM(Yis)

VDS = 15V, VGS = 0, f = 400MHz

VDS = 15V, VGS = 0, f = 1.0MHz

VDS = 15V, VGS = 0, f = 1.0MHz

100MHz VDS = 15V, VGS = 0

400MHz

4000 –

– µmhos

–

– 4.5 pF

–

– 1.0 pF

–

– 3.0 mmho

–

– 12.0 mmho

Functional Characteristics

Noise Figure

NF

100MHz VDS = 15V, ID = 5mA,

400MHz RiG = 1kΩ

–

– 2.0 dB

–

– 4.0 dB

Common Source Power Gain

Gps 100MHz VDS = 15V, ID = 5mA,

400MHz RiG = 1kΩ

18 –

–

dB

10 –

–

dB

Output Susceptance

IM(Yos) 100MHz VDS = 15V, VGS = 0

400MHz

–

– 1000 µmhos

–

– 4000 µmhos

Note 1. tp = 100ms, Duty Cycle = 10%.

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