BFG11 データシートの表示（PDF） - Philips Electronics
部品番号
コンポーネント説明
メーカー
BFG11 Datasheet PDF : 12 Pages
| |||
Philips Semiconductors
NPN 2 GHz RF power transistor
Product specification
BFG11; BFG11/X
FEATURES
• High power gain
• High efficiency
• Small size discrete power amplifier
• 1.9 GHz operating area
• Gold metallization ensures excellent reliability.
APPLICATIONS
• Common emitter class-AB operation in hand-held radio
equipment at 1.9 GHz.
DESCRIPTION
NPN silicon planar epitaxial transistors encapsulated in a
plastic, 4-pin dual-emitter SOT143 package.
MARKING
TYPE NUMBER
BFG11
BFG11/X
CODE
N72
N73
PINNING
PIN
DESCRIPTION
BFG11 (see Fig.1)
1
collector
2
base
3
emitter
4
emitter
BFG11/X (see Fig.1)
1
collector
2
emitter
3
base
4
emitter
handbook, 2 c4olumns
3
1
Top view
2
MSB014
Fig.1 SOT143.
QUICK REFERENCE DATA
RF performance at Tamb = 25 °C in a common-emitter test circuit (see Fig.7).
MODE OF OPERATION
f
VCE
PL
Gp
(GHz)
(V)
(mW)
(dB)
ηc
(%)
Pulsed, class-AB, duty cycle < 1 : 8
1.9
3.6
400
≥4
≥50
1995 Apr 07
2
Share Link: 