BFG11 データシートの表示（PDF） - Philips Electronics

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BFG11

NPN 2 GHz RF power transistor

Philips Electronics 

Philips Semiconductors

NPN 2 GHz RF power transistor

Product specification

BFG11; BFG11/X

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

VCBO

VCEO

VEBO

IC

IC(AV)

Ptot

Tstg

Tj

collector-base voltage

collector-emitter voltage

emitter-base voltage

collector current (DC)

average collector current

total power dissipation

storage temperature

junction temperature

open emitter

open base

open collector

up to Ts = 60 °C; note 1; see Fig.2

MIN.

−

−

−

−

−

−

−65

−

MAX.

20

8

2.5

500

500

400

+150

175

UNIT

V

V

V

mA

mA

mW

°C

°C

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

Rth j-s

thermal resistance from junction to soldering point up to Ts = 60 °C; note 1;

Ptot = 400 mW

Note to the “Limiting values” and “Thermal characteristics”

1. Ts is the temperature at the soldering point of the collector pin.

VALUE

290

UNIT

K/W

handbook5,0h0alfpage

P tot

(mW)

400

300

200

100

0

0

50

MLC818

100

150 Ts (oC) 200

Fig.2 Power derating curve.

1995 Apr 07

3

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