BFG11 データシートの表示（PDF） - Philips Electronics
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BFG11 Datasheet PDF : 12 Pages
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Philips Semiconductors
NPN 2 GHz RF power transistor
Product specification
BFG11; BFG11/X
SPICE parameters for the BFG11 crystal
SEQUENCE No. PARAMETER VALUE UNIT
1
IS
3.338 fA
2
BF
97.14 −
3
NF
0.988 −
4
VAF
31.40 V
5
IKF
51.45 A
6
ISE
23.53 pA
7
NE
2.386 −
8
BR
13.73 −
9
NR
0.989 −
10
VAR
2.448 V
11
IKR
100.0 A
12
ISC
54.10 fA
13
14
15
16
17
18
19(1)
20(1)
21(1)
NC
RB
IRB
RBM
RE
RC
XTB
EG
XTI
1.224 −
1.740 Ω
1.000 µA
1.740 Ω
59.65 mΩ
0.124 Ω
0.000 −
1.110 eV
3.000 −
22
CJE
9.555 pF
23
VJE
0.600 V
24
MJE
0.315 −
25
TF
12.96 ps
26
XTF
400.0 −
27
VTF
0.866 V
28
ITF
5.940 A
29
PTF
0.000 deg
30
CJC
4.274 pF
31
VJC
0.650 V
32
33
34(1)
35(1)
MJC
XCJC
TR
CJS
0.392 −
0.150 −
0.000 ns
0.000 F
SEQUENCE No.
36(1)
37(1)
38
PARAMETER
VJS
MJS
FC
VALUE UNIT
750.0 mV
0.000 −
0.742 −
Note
1. These parameters have not been extracted, the
default values are shown.
handbook, halfpage
C cb
L1
B
C be
LB
B' C'
E'
LE
L3
E
L2
C
Cce
MBC964
QLB = 50; QLE = 50; QLB,E(f) = QLB,E√(f/fc);
fc = scaling frequency = 100 MHz.
Fig.6 Package equivalent circuit SOT143.
List of components (see Fig.6)
DESIGNATION
Cbe
Ccb
Cce
L1
L2
L3
LB
LE
VALUE
84
17
191
0.12
0.21
0.06
0.95
0.40
UNIT
fF
fF
fF
nH
nH
nH
nH
nH
1995 Apr 07
6
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