BFG590W データシートの表示（PDF） - Philips Electronics

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BFG590W

NPN 5 GHz wideband transistors

Philips Electronics 

Philips Semiconductors

NPN 5 GHz wideband transistors

Product specification

BFG590W; BFG590W/X

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

VCBO

VCEO

VEBO

IC

Ptot

Tstg

Tj

collector-base voltage

collector-emitter voltage

emitter-base voltage

collector current (DC)

total power dissipation

storage temperature

junction temperature

CONDITIONS

open emitter

open base

open collector

Ts ≤ 85 °C; see Fig.2; note 1

Note

1. Ts is the temperature at the soldering point of the collector pin.

MIN.

−

−

−

−

−

−65

−

MAX.

20

15

3

200

500

+150

175

UNIT

V

V

V

mA

mW

°C

°C

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

Rth j-s

thermal resistance from junction to soldering point Ts ≤ 85 °C; note 1

Note

1. Ts is the temperature at the soldering point of the collector pin.

VALUE

180

UNIT

K/W

600

handbook, halfpage

P tot

(mW)

400

MBG248

200

0

0

50

100

150

Ts

(o C) 200

Fig.2 Power derating curve.

1998 Oct 15

3

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