BFG590W データシートの表示（PDF） - Philips Electronics
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BFG590W Datasheet PDF : 12 Pages
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Philips Semiconductors
NPN 5 GHz wideband transistors
Product specification
BFG590W; BFG590W/X
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
hFE
fT
Cre
GUM
|S21|2
PL1
collector-base breakdown voltage IC = 0.1 mA; IE = 0
20
collector-emitter breakdown voltage IC = 10 mA; IB = 0
15
emitter-base breakdown voltage IE = 0.1 mA; IC = 0
3
collector leakage current
VCB = 10 V; IE = 0
−
DC current gain
IC = 70 mA; VCE = 8 V
60
transition frequency
IC = 80 mA; VCE = 4 V; f = 1 GHz; −
Tamb = 25 °C
feedback capacitance
IC = 0; VCB = 8 V; f = 1 MHz
−
maximum unilateral power gain;
note 1
IC = 80 mA; VCE = 4 V; f = 900 MHz; −
Tamb = 25 °C
IC = 80 mA; VCE = 4 V; f = 2 GHz; −
Tamb = 25 °C
insertion power gain
IC = 80 mA; VCE = 4 V; f = 1 GHz; −
Tamb = 25 °C
output power at 1 dB gain
compression
IC = 80 mA; VCE = 5 V; f = 900 MHz; −
RL = 50 Ω; Tamb = 25 °C
−
−
V
−
−
V
−
−
V
−
100 nA
90 250
5
−
GHz
0.7 −
pF
13 −
dB
7.5 −
dB
11 −
dB
21 −
dBm
Note
1. GUM is the maximum unilateral power gain, assuming S12 is zero. GUM
=
10
log -(---1-----–------S----1---1----S2---)-2---1(---1-2----–------S----2--2-----2---)-
dB.
1998 Oct 15
4
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