BFG590W/X データシートの表示（PDF） - Philips Electronics
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BFG590W/X Datasheet PDF : 12 Pages
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Philips Semiconductors
NPN 5 GHz wideband transistors
Product specification
BFG590W; BFG590W/X
SPICE parameters for the BFG590W die
SEQUENCE No. PARAMETER VALUE UNIT
1
IS
1.341 fA
2
BF
123.5 −
3
NF
0.988 −
4
VAF
75.85 V
5
IKF
9.656 A
6
ISE
232.2 fA
7
NE
2.134 −
8
BR
10.22 −
9
NR
1.016 −
10
VAR
1.992 V
11
IKR
294.1 mA
12
ISC
211.0 aA
13
14
15
16
17
18
19 (1)
20 (1)
21 (1)
NC
RB
IRB
RBM
RE
RC
XTB
EG
XTI
0.997 −
5.000 Ω
1.000 µA
5.000 Ω
1.275 Ω
920.6 mΩ
0.000 −
1.110 eV
3.000 −
22
CJE
3.821 pF
23
VJE
600.0 mV
24
MJE
0.348 −
25
TF
13.60 ps
26
XTF
71.73 −
27
VTF
10.28 V
28
ITF
1.929 A
29
PTF
0.000 deg
30
CJC
1.409 pF
31
VJC
219.4 mV
32
33
34
35 (1)
MJC
XCJC
TR
CJS
0.166 −
0.150 −
2.340 ns
0.000 F
SEQUENCE No.
36 (1)
37 (1)
38
PARAMETER
VJS
MJS
FC
VALUE UNIT
750.0 mV
0.000 −
0.733 −
Note
1. These parameters have not been extracted, the
default values are shown.
handbook, halfpage
C cb
L1
B
C be
LB
B' C'
E'
LE
L3
L2
C
Cce
MBC964
E
QLB = 50; QLE = 50; QLB,E(f) = QLB,E√(f/fc)
fc = scaling frequency = 1 GHz.
Fig.14 Package equivalent circuit SOT343N.
List of components (see Fig.14)
DESIGNATION
Cbe
Ccb
Cce
L1
L2
L3
LB
LE
VALUE
70
50
115
0.34
0.10
0.25
0.40
0.40
UNIT
fF
fF
fF
nH
nH
nH
nH
nH
1998 Oct 15
9
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