BFG135 データシートの表示（PDF） - Philips Electronics
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BFG135 Datasheet PDF : 12 Pages
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Philips Semiconductors
NPN 7GHz wideband transistor
Product specification
BFG135
handbook,4h5alfpage
d im
(dB)
50
MBB292
55
60
65
70
20
40
60
80
100
120
I C (mA)
VCE = 10 V; Vo = 900 mV; Tamb = 25 °C;
f(p+q−r) = 443.25 MHz.
Fig.8 Intermodulation distortion as a function of
collector current.
handbook,4h5alfpage
d im
(dB)
50
MBB293
55
60
65
70
20
40
60
80
100
120
I C (mA)
VCE = 10 V; Vo = 850 mV; Tamb = 25 °C;
f(p+q−r) = 793.25 MHz.
Fig.9 Intermodulation distortion as a function of
collector current.
45
handbook, halfpage
d2
(dB)
50
MBB291
45
handbook, halfpage
d2
(dB)
50
MBB290
55
55
60
60
65
70
20
40
60
80
100
120
I C (mA)
VCE = 10 V; Vo = 50 dBmV; Tamb = 25 °C;
f(p+q) = 450 MHz.
Fig.10 Second order intermodulation distortion as
a function of collector current.
65
70
20
40
60
80
100
120
I C (mA)
VCE = 10 V; Vo = 50 dBmV; Tamb = 25 °C
f(p+q) = 810 MHz.
Fig.11 Second order intermodulation distortion as
a function of collector current.
1995 Sep 13
7
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