BD789 データシートの表示（PDF） - Motorola => Freescale
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BD789 Datasheet PDF : 6 Pages
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1.0
0.7 D = 0.5
0.5
0.3
0.2
0.2
0.1
0.05
0.1
0.07
0.05
0.02
0.03
0.01
0.02
0 (SINGLE PULSE)
0.01
0.02
0.05
0.1
0.2
BD789 BD791 BD790 BD792
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
RθJC(t) = r(t) RθJC
RθJC = 8.34°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) RθJC(t)
0.5
1.0
2.0
5.0
10
20
t, TIME (ms)
50
100
200
Figure 4. Thermal Response
10
5.0
100 µs
1.0 ms
2.0
500 µs
dc
1.0
0.5
TJ = 150°C
BONDING WIRE LIMITED
5.0 ms
THERMALLY LIMITED @ TC = 25°C
0.1
(SINGLE PULSE)
0.05
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED VCEO
0.02
0.01
1.0
2.0 3.0
BD789 (NPN) BD790 (PNP)
BD791 (NPN) BD792 (PNP)
5.0 7.0 10
20 30
50 70 100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 5. Active Region Safe Operating Area
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C: TC is
variable depending on conditions. Second breakdown pulse
vlimits are valid for duty cycles to 10% provided TJ(pk)
150_C, TJ(pk) may be calculated from the data in Fig-
ure 4. At high case temperatures, thermal limitations will re-
duce the power that can be handled to values less than the
limitations imposed by second breakdown.
2000
1000
700
500
ts
300
200
TJ = 25°C
VCC = 30 V
IC/IB = 10
IB1 = IB2
100
70
50
tf
BD789, 791 (NPN)
30
BD790, 792 (PNP)
20
0.04 0.06 0.1
0.2
0.4 0.6 1.0
2.0 4.0
IC, COLLECTOR CURRENT (AMP)
Figure 6. Turn–Off Time
200
TJ = 25°C
100
Cib
70
50
30
20
10
1.0
Cob
BD789, 791 (NPN)
BD790, 792 (PNP)
2.0 3.0 5.0 7.0
10 20 30
VR, REVERSE VOLTAGE (VOLTS)
50 70 100
Figure 7. Capacitance
Motorola Bipolar Power Transistor Device Data
3
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