UTC2SC1815 データシートの表示（PDF） - Unisonic Technologies
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UTC2SC1815 Datasheet PDF : 2 Pages
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UTC2SC1815 NPN EPITAXIAL SILICON TRANSISTOR
CLASSIFICATION OF hFE1
RANK
Y
RANGE
120-240
TYPICAL CHARACTERISTIC CURVES
G
200-400
L
350-700
Fig.1 Static characteristics
100
80
IB=300 µA
60
IB=250 µA
40
IB=200 µA
IB=150 µA
20
IB=100 µA
0
0
4
IB=50 µA
8
12
16
20
Collector-Emitter voltage ( V)
Fig.4 Saturation voltage
104
Ic=10*IB
103
VBE(sat)
Fig.2 DC current Gain
103
VCE=6V
102
101
100
10-1
100
101
102
103
Ic,Collector current (mA)
Fig.5 Current gain-bandwidth
product
103
VCE=6V
102
Fig.3 Base-Emitter on Voltage
102
101
VCE=6V
100
10-1
0
0.2
0.4
0.6
0.8
1.0
Base-Emitter voltage (V)
Fig.6 Collector output
Capacitance
102
f=1MHz
101
IE=0
102
VCE(sat)
101
10-1
100
101
102
103
Ic,Collector current (mA)
101
100
10-1
100
101
102
Ic,Collector current (mA)
100
10-1
100
101
102
103
Collector-Base voltage (V)
UTC UNISONIC TECHNOLOGIES CO. LTD
2
QW-R201-006,A
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