BU408 データシートの表示（PDF） - Wing Shing International Group

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BU408

NPN EPITAXIAL SILICON TRANSISTOR

Wing Shing International Group 

BU406/406H/408

NPN EPITAXIAL SILICON TRANSISTOR

HIGH VOLTAGE SWITCHING USE IN

HORIZONTAL DEFLECTION OUTPUT STAGE

TO-220

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

Characteristic

Collector-Base Voltage

Collector-EmitterVoltage

Emitter-Base voltage

Collector Current (DC)

Collector Peck Current

Base Current (DC)

Collector Dissipation (Tc=25°C)

Junction Temperature

Storage Temperature

Symbol Rating

Unit

VCBO

400

V

VCEO

200

V

VEBO

6

V

IC

7

A

ICM

10

A

IB

4

A

PC

60

W

Tj

150

°C

Tstg

-65~150

°C

ELECTRICAL CHARACTERISTICS (Ta=25°C)

Characterristic

Collector Cutoff Current (VBE=0)

Emitter Cutoff Current(IC=0)

Collector Emitter Saturation Voltage :BU406

:BU406H

:BU408

Base- Emitter Saturation Voltage :BU406

:BU406H

:BU408

Current Gain Bandwith Product

Turn-Off Time

:BU406

:BU406H

:BU408

Symbol

Test Condition

Min Typ

ICES

IEBO

VCE(sat)

VBE(sat)

fT

toff

VCE= 400V , VEB=

0

VCE= 250V , VEB=

0

VCE= 250V , VEB=

0

Tc=150

VEB= 6V , IC=0

IC=5A,

IB=0.5A

IC=5A,

IB=0.8A

IC=6A,

IB=1.2A

IC=5A,

IB=0.5A 10

IC=5A,

IB=0.8A

IC=6A,

IB=1.2A

VCE= 10V ,

IC=500mA

IC=5A,

IB=0.5A

IC=5A,

IB=0.8A

IC=6A,

IB=1.2A

Max

5

100

1

1

1

1

1

1.2

1.2

1.5

0.75

0.4

0.4

Unit

mA

µA

mA

mA

V

V

V

V

V

V

MHZ

µS

µS

µS

Wing Shing Computer Components Co., (H.K.)Ltd.

Homepage: http://www.wingshing.com

Tel:(852)2341 9276 Fax:(852)2797 8153

E-mail: wsccltd@hkstar.com

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