2SD1270 データシートの表示（PDF） - Wing Shing International Group

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2SD1270

NPN EPITAXIAL SILICON TRANSISTOR

Wing Shing International Group 

2SD1270

NPN EPITAXIAL SILICON TRANSISTOR

POWER AMPLIFIER

VERTICAL DEFLECTION OUTPUT

! Complement to 2SB945

ABSOLUTE MAXIMUM RATINGS (TA=25℃)

SC-67

Characteristic

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base voltage

Collector Current (DC)

Collector Dissipation (Tc=25℃)

Junction Temperature

Storage Temperature

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Rating

-130

-80

-5

-5

40

150

-50~150

Unit

V

V

V

A

W

℃

℃

ELECTRICAL CHARACTERISTICS (TA=25℃)

Characteristic

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Collector- Emitter Saturation Voltage

Current Gain Bandwidth Product

Symbol

Test Condition

Min Typ

ICBO

VCB= -150V , IE=0

IEBO

VEB= -5V , IC=0

hFE1

VCE= -2.0V ,IC=-2.0A 60

VCE(sat)

IC=-4A ,IB=-0.2mA

fT

VCE= -10V ,IC=-0.5A

60

Max

-10

-10

260

-0.5

Unit

µA

µA

V

MHZ

Wing Shing Computer Components Co., (H.K.)Ltd.

Homepage: http://www.wingshing.com

Tel:(852)2341 9276 Fax:(852)2797 8153

E-mail: wsccltd@hkstar.com

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