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IRF630N データシート - NJSEMI

IRF630N Datasheet PDF New Jersey Semiconductor

部品番号
IRF630N

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2 Pages

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67.5 kB

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NJSEMI
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DESCRIPTION
● Drain Current –ID=9.3A@ TC=25℃
● Drain Source Voltage-
   : VDSS= 200V(Min)
● Static Drain-Source On-Resistance
   : RDS(on) = 0.3Ω(Max)
● Fast Switching Speed
● Low Drive Requirement


APPLICATIONS
● This device is n-channel, enhancement mode, power MOSFET designed especially for high power, high speed applications, such as switching power supplies,UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits.

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