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K10N60(2008) データシート - Infineon

K10N60 Datasheet PDF Infineon Technologies

部品番号
K10N60

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Infineon
Infineon Technologies GO URL

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode

● 75% lower Eoff compared to previous generation combined with low conduction losses
● Short circuit withstand time – 10 μs
● Designed for:
   - Motor controls
   - Inverter
● NPT-Technology for 600V applications offers:
   - very tight parameter distribution
   - high ruggedness, temperature stable behaviour
   - parallel switching capability
● Very soft, fast recovery anti-parallel Emitter Controlled Diode
● Pb-free lead plating; RoHS compliant
● Qualified according to JEDEC1 for target applications
● Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/


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