STMicroelectronics

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

International Rectifier

RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-2)

International Rectifier

RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-2)

International Rectifier

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR

STMicroelectronics

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

New Jersey Semiconductor

N- CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

STMicroelectronics

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

STMicroelectronics

N - CHANNEL 800V - 1.8Ω - 5.4A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR

New Jersey Semiconductor

N - CHANNEL 800V - 0.85Ω - 9.1A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR

STMicroelectronics

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

STMicroelectronics

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

STMicroelectronics

N - CHANNEL 800V - 0.85Ω - 9.1A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR

STMicroelectronics

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

STMicroelectronics

N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR