K9F2G08B0B データシートの表示（PDF） - Samsung

部品番号

コンポーネント説明

メーカー

K9F2G08B0B

256M x 8 Bit NAND Flash Memory

Samsung 

K9F2G08B0B

K9F2G08U0B

Preliminary

FLASH MEMORY

Program / Erase Characteristics

Parameter

Program Time

Dummy Busy Time for Two-Plane Page Program

Number of Partial Program Cycles

Symbol

Min

Typ

Max

Unit

tPROG

-

200

700

µs

tDBSY

-

0.5

1

µs

Nop

-

-

4

cycles

Block Erase Time

tBERS

-

1.5

10

ms

NOTE :

1. Typical value is measured at Vcc=3.3V, TA=25°C. Not 100% tested.

2. Typical program time is defined as the time within which more than 50% of the whole pages are programmed at 3.3V Vcc and 25°C temperature.

AC Timing Characteristics for Command / Address / Data Input

Parameter

CLE Setup Time

CLE Hold Time

CE Setup Time

CE Hold Time

WE Pulse Width

ALE Setup Time

ALE Hold Time

Data Setup Time

Data Hold Time

Write Cycle Time

WE High Hold Time

Address to Data Loading Time

Symbol

tCLS(1)

tCLH

tCS(1)

tCH

tWP

tALS(1)

tALH

tDS(1)

tDH

tWC

tWH

tADL(2)

Min

12

5

20

5

12

12

5

12

5

25

10

100

Max

-

-

-

-

-

-

-

-

-

-

-

-

NOTES : 1. The transition of the corresponding control pins must occur only once while WE is held low

2. tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle

Unit

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

Samsung Confidential

10

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