K9F2G08X0B データシートの表示（PDF） - Samsung

部品番号

コンポーネント説明

メーカー

K9F2G08X0B

256M x 8 Bit NAND Flash Memory

Samsung 

K9F2G08B0B

K9F2G08U0B

Preliminary

FLASH MEMORY

AC Characteristics for Operation

Parameter

Data Transfer from Cell to Register

ALE to RE Delay

CLE to RE Delay

Ready to RE Low

RE Pulse Width

WE High to Busy

Read Cycle Time

RE Access Time

CE Access Time

RE High to Output Hi-Z

CE High to Output Hi-Z

CE High to ALE or CLE Don’t Care

RE High to Output Hold

RE Low to Output Hold

CE High to Output Hold

RE High Hold Time

Output Hi-Z to RE Low

RE High to WE Low

WE High to RE Low

Device Resetting Time(Read/Program/Erase)

Symbol

Min

tR

-

tAR

10

tCLR

10

tRR

20

tRP

12

tWB

-

tRC

25

tREA

-

tCEA

-

tRHZ

-

tCHZ

-

tCSD

0

tRHOH

15

tRLOH

5

tCOH

15

tREH

10

tIR

0

tRHW

100

tWHR

60

tRST

-

NOTE : 1. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5µs.

Max

Unit

25

µs

-

ns

-

ns

-

ns

-

ns

100

ns

-

ns

20

ns

25

ns

100

ns

30

ns

-

ns

-

ns

-

ns

-

ns

-

ns

-

ns

-

ns

-

ns

5/10/500(1)

µs

Samsung Confidential

11

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