K9F2G08B0B データシートの表示（PDF） - Samsung

部品番号

コンポーネント説明

メーカー

K9F2G08B0B

256M x 8 Bit NAND Flash Memory

Samsung 

K9F2G08B0B

K9F2G08U0B

NAND Flash Technical Notes (Continued)

Erase Flow Chart

Preliminary

FLASH MEMORY

Read Flow Chart

Start

Write 60h

Write Block Address

Start

Write 00h

Write Address

Write D0h

Write 30h

Read Status Register

Read Data

I/O 6 = 1 ?

No

or R/B = 1 ?

*

No

Erase Error

Yes

I/O 0 = 0 ?

Yes

Erase Completed

ECC Generation

No

Reclaim the Error

Verify ECC

Yes

Page Read Completed

* : If erase operation results in an error, map out

the failing block and replace it with another block.

Block Replacement

{ 1st

(n-1)th

nth

Block A

an error occurs.

(page)

1

Buffer memory of the controller.

Block B

{ 1st

(n-1)th

2

nth

(page)

* Step1

When an error happens in the nth page of the Block ’A’ during erase or program operation.

* Step2

Copy the data in the 1st ~ (n-1)th page to the same location of another free block. (Block ’B’)

* Step3

Then, copy the nth page data of the Block ’A’ in the buffer memory to the nth page of the Block ’B’.

* Step4

Do not erase or program to Block ’A’ by creating an ’invalid block’ table or other appropriate scheme.

Samsung Confidential

14

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