K9F2G08B0B データシートの表示（PDF） - Samsung
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K9F2G08B0B Datasheet PDF : 41 Pages
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K9F2G08B0B
K9F2G08U0B
Preliminary
FLASH MEMORY
NAND Flash Technical Notes (Continued)
Addressing for program operation
Within a block, the pages must be programmed consecutively from the LSB(least significant bit) page of the block to the MSB(most
significant bit) pages of the block. Random page address programming is prohibited. In this case, the definition of LSB page is the
LSB among the pages to be programmed. Therefore, LSB doesn't need to be page 0.
Page 63
(64)
:
Page 31
(32)
:
Page 2
(3)
Page 1
(2)
Page 0
(1)
Data register
From the LSB page to MSB page
DATA IN: Data (1)
Data (64)
Page 63
(64)
:
Page 31
(1)
:
Page 2
(3)
Page 1
(32)
Page 0
(2)
Data register
Ex.) Random page program (Prohibition)
DATA IN: Data (1)
Data (64)
Samsung Confidential
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