K9LBG08U0D データシートの表示（PDF） - Samsung
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コンポーネント説明
メーカー
K9LBG08U0D Datasheet PDF : 74 Pages
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K9HCG08U1D K9PDG08U5D
K9LBG08U0D K9MDG08U5D
Preliminary
FLASH MEMORY
Memory Map
K9LBG08U0D is arranged in four 8Gb memory planes. Each plane contains 2,048 blocks and 4314 byte page registers. This allows it
to perform simultaneous page program and block erase by selecting one page or block from each plane. The block address map is
configured so that two-plane program/erase operations can be executed by dividing the memory array into plane 0~1 or plane 2~3
separately.
For example, two-plane program/erase operation into plane 0 and plane 2 is prohibited. That is to say, two-plane program/erase oper-
ation into plane 0 and plane 1 or into plane 2 and plane 3 is allowed.
Plane 0
(2048 Block)
Block 0
Page 0
Page 1
Page 126
Page 127
Block 2
Page 0
Page 1
Plane 1
(2048 Block)
Block 1
Page 0
Page 1
Page 126
Page 127
Block 3
Page 0
Page 1
Plane 2
(2048 Block)
Block 4096
Page 0
Page 1
Page 126
Page 127
Block 4098
Page 0
Page 1
Plane 3
(2048 Block)
Block 4097
Page 0
Page 1
Page 126
Page 127
Block 4099
Page 0
Page 1
Page 126
Page 127
Page 126
Page 127
Page 126
Page 127
Page 126
Page 127
Block 4092
Page 0
Page 1
Page 126
Page 127
Block 4094
Page 0
Page 1
Page 126
Page 127
4314byte Page Registers
Block 4093
Page 0
Page 1
Page 126
Page 127
Block 4095
Page 0
Page 1
Page 126
Page 127
4314byte Page Registers
Block 8188
Page 0
Page 1
Page 126
Page 127
Block 8190
Page 0
Page 1
Page 126
Page 127
4314byte Page Registers
Block 8189
Page 0
Page 1
Page 126
Page 127
Block 8191
Page 0
Page 1
Page 126
Page 127
4314byte Page Registers
Samsung Confidential
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