K9LBG08U0D データシートの表示（PDF） - Samsung
部品番号
コンポーネント説明
メーカー
K9LBG08U0D Datasheet PDF : 74 Pages
| |||
K9HCG08U1D K9PDG08U5D
K9LBG08U0D K9MDG08U5D
Preliminary
FLASH MEMORY
AC Characteristics for Operation
Parameter
Data Transfer from Cell to Register
ALE to RE Delay
CLE to RE Delay
Ready to RE Low
RE Pulse Width
WE High to Busy
WP High to WE Low
Read Cycle Time
RE Access Time
CE Access Time
RE High to Output Hi-Z
CE High to Output Hi-Z
CE High to ALE or CLE Don’t Care
RE High to Output Hold
RE Low to Output Hold
RE High Hold Time
Output Hi-Z to RE Low
RE High to WE Low
WE High to RE Low
Device Resetting Time(Read/Pro-
gram/Erase)
Symbol
tR
tAR
tCLR
tRR
tRP
tWB
tWW
tRC
tREA
tCEA
tRHZ
tCHZ
tCSD
tRHOH
tRLOH
tREH
tIR
tRHW
tWHR
tRST
Min
K9LBG08U0D
K9HCG08U1D
K9XDG08U5D
-
10
10
10
10
20
20
15
25
-
-
100
100
30
50
-
-
-
-
-
-
-
-
0
0
15
15
5
-
10
15
0
0
100
100
60
60
-
-
Max
K9LBG08U0D K9XDG08U5D
K9HCG08U1D
60
60
-
-
-
-
100
100
-
20
25
100
30
-
-
-
-
-
-
-
5/10/500(1)
30
45
100
30
5/10/500(1)
Unit
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
Cache Busy in Read Cache
(following 31h and 3Fh)
tDCBSYR
-
-
65
65
µs
NOTE: 1. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5µs.
Samsung Confidential
16
Share Link: 