STPS1545C データシートの表示（PDF） - STMicroelectronics
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STPS1545C Datasheet PDF : 10 Pages
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Characteristics
STPS1545C
Figure 7.
Reverse leakage current versus
reverse voltage applied (typical
values, per diode)
Figure 8.
Junction capacitance versus
reverse voltage applied (typical
values, per diode)
IR(µA)
5E+4
C(pF)
1000
1E+4
Tj=150°C
1E+3
Tj=125°C
Tj=100°C
500
1E+2
Tj=75°C
1E+1
Tj=50°C
Tj=25°C
200
1E+0
VR(V)
1E-1
100
0
5
10
15
20
25
30
35
40
45
1
2
F=1MHz
VOSC=30mVRMS
Tj=25°C
VR(V)
5
10
20
50
Figure 9.
Forward voltage drop versus
forward current (high values, per
diode)
IFM(A)
100.0
10.0
Tj=125°C
(typical values)
Tj=25°C
maximum values
Tj=125°C
maximum values
1.0
VFM(V)
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Figure 10. Thermal resistance junction to
ambient versus copper surface
under tab (D2PAK)
80 Rth(j-a)(°C/W)
70
Epoxy printed circuit board
copper thickness = 35 µm
D²PAK
60
50
40
30
20
10
0
0
Scu(cm²)
5
10
15
20
25
30
35
40
Figure 11.
Thermal resistance junction to ambient versus copper surface under tab (DPAK)
Rth(j-a)(°C/W)
100
90
80
Epoxy printed circuit board
copper thickness = 35 µm
DPAK
70
60
50
40
30
20
10
0
Scu(cm²)
0
5
10
15
20
25
30
35
40
4/10
Doc ID 3503 Rev 7
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