2N7002S データシートの表示（PDF） - Unspecified

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2N7002S

SURFACE MOUNT Dual N-Channel Enhancement MOS FET

Unspecified 

RATING CHARACTERISTIC CURVES ( 2N7002S )

Typical Electrical Characteristics (continued)

Figure 7. Breakdown Voltage Variation

with Temperature

1.1

1.075

ID = 250µA

1.05

1.025

1

0.975

0.95

0.925

-50

-25

0

25

50

75

100 125 150

TJ , JUNCTION TEM PERATURE (°C)

Figure 8. Body Diode Forward Voltage

Variation with Drain Current

2

1

VGS = 0V

0 .5

0 .1

0 .0 5

TJ = 1 2 5 °C

25°C

-5 5 ° C

0 .0 1

0 .0 0 5

0 .0 0 1

0 .2

0 .4

0 .6

0 .8

1

1 .2

1 .4

VSD , BODY DIODE FORWARD VOLTAGE (V)

Figure 9. Capacitance Characteristics

60

40

C iss

20

10

C oss

5

f = 1 MHz

2

VGS = 0V

C rss

1

1

2

3

5

10

20 30

50

VDS , DRAIN TO SOURCE VOLTAGE (V)

Figure 10. Gate Charge Characteristics

1.0

VDS = 30V

.8

.6

.4

.2

ID =250mA

0

0

0 .1

0 .2

0 .3

0 .4

0.5

Q g , GATE CHARGE (nC)

VGS

Figure 11.

VDD

VIN

RL

D

V OUT

R GEN

G

DUT

S

t d(on)

Figure 12. Switching Waveforms

t on

tr

90%

t d(off)

toff

tf

90%

Output, Vout

Input, Vin

10%

10%

50%

10%

90% Inverted

50%

Pulse Width

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