AS58C1001DG(2008) データシートの表示（PDF） - Austin Semiconductor

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AS58C1001DG
(Rev.:2008)

128K x 8 EEPROM EEPROM Memory

Austin Semiconductor 

Austin Semiconductor, Inc.

EEPROM

AS58C1001

AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION

(-55oC < T < 125oC; Vcc = 5V +10%)

C

Test Conditions

z Input Pulse Levels:

z Input rise and fall times:

z Output Load:

z Reference levels for measuring timing:

0.0V to 3.0V

< 20ns

1 TTL Gate +100pF (including scope and jig)

1.5V, 1.5V





  

  
  

 
  

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AC ELECTRICAL CHARACTERISTICS FOR SOFTWARE DATA

PROTECTION CYCLE OPERATION

PARAMETER

SYMBOL MIN MAX

Byte Load Cycle Time

tBLC

0.55 30

Write Cycle Time

tWC

10

---

UNITS

μS

mS

AC ELECTRICAL CHARACTERISTICS FOR DATA\ POLLING OPERATION

PARAMETER

Output Enable Hold Time

Output Enable to Write Setup Time

Write Start Time

Write Cycle Time

SYMBOL MIN

tOEH

0

tOES

0

tDW

150

tWC

---

MAX

---

---

---

10

UNITS

ns

ns

ns

ms

AS58C1001

Rev. 5.5 12/08

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

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